Comparative evaluation of chemically amplified resists for electron-beeam top surface imaging use
Author:
Publisher
American Vacuum Society
Subject
General Engineering
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Application of 4-methyl-1-acetoxycalix[6]arene resist to complementary metal–oxide–semiconductor gate processing;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1999
2. Silylation and Dry Development of Chemically Amplified Resists SAL601*, AZPN114*1, and Epoxidised Resist (EPR*1) for High Resolution Electron-Beam Lithography;Japanese Journal of Applied Physics;1998-12-30
3. Top surface imaging process at and below quarter-micron resolution and pattern transfer into metal;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1997-11
4. Low energy electron beam top surface image processing using chemically amplified AXT resist;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1997-11
5. Economic production of submicron ASICs with laser beam direct write lithography;Microelectronic Engineering;1997-02
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