Interfacial properties of metal–insulator–semiconductor capacitors on GaAs(110)
Author:
Publisher
American Vacuum Society
Subject
Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Link
http://avs.scitation.org/doi/pdf/10.1116/1.579829
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2. The Effect of Interfacial Dipoles on the Metal-Double Interlayers-Semiconductor Structure and Their Application in Contact Resistivity Reduction;ACS Applied Materials & Interfaces;2016-12-14
3. Fermi-Level Unpinning Using a Ge-Passivated Metal–Interlayer–Semiconductor Structure for Non-Alloyed Ohmic Contact of High-Electron-Mobility Transistors;IEEE Electron Device Letters;2015-09
4. Indium and gallium diffusion through zirconia in the TiN/ZrO2/InGaAs stack;Applied Physics Letters;2015-06
5. Interface Properties of Mixed (TiO2)1−x(Y2O3)xand (Ta2O5)1−x(Y2O3)x(0≤x≤1) Gate Dielectrics on Sulfur-Passivated GaAs;Journal of The Electrochemical Society;2012
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