Reactive ion etching technique for via-hole applications in thick GaAs wafers-Reference-Cited by-同舟云学术

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Reactive ion etching technique for via-hole applications in thick GaAs wafers

Published:2007 Issue:2 Volume:25 Page:312
ISSN:1071-1023
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Wang Chih-Cheng,Lin Yu-Lu,Lin Shun-Kuan,Li Chun-Sheng,Huang Hou-Kuei,Wu Chang-Luen,Chang Chian-Sern,Wang Yeong-Her

Publisher

American Vacuum Society

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Experimental Study of the Influence of Process Pressure and Gas Composition on GaAs Etching Characteristics in Cl2/BCl3-Based Inductively Coupled Plasma;Plasma Science and Technology;2011-04

2. Study of inductively coupled Cl2/BCl3 plasma process for high etch rate selective etching of via-holes in GaAs;Vacuum;2010-09

3. Dry etching process of GaAs in capacitively coupled BCl3-based plasmas;Thin Solid Films;2010-09

4. N2 effect on GaAs etching at 150mTorr capacitively-coupled Cl2/N2 plasma;Microelectronic Engineering;2010-04

5. Characterization and Cu electroless plating of laser-drilled through-wafer via-holes in GaN/Al2O3;Thin Solid Films;2009-05

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