Effects of etch-induced damage on the electrical characteristics of in-plane gated quantum wire transistors-Reference-Cited by-同舟云学术

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Effects of etch-induced damage on the electrical characteristics of in-plane gated quantum wire transistors

Published:1996-11 Issue:6 Volume:14 Page:3663
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:
Short-container-title:J. Vac. Sci. Technol. B

Author:

Ko K. K.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Compact logic NAND-gate based on a single in-plane quantum-wire transistor;IEEE Electron Device Letters;2005-03

2. Quantum point contact transistor with high gain and charge sensitivity;Journal of Applied Physics;2001-03-15

3. Room temperature simulation of a novel quantum wire transistor;Solid-State Electronics;2001-03

4. Low‐Pressure Etching of Nanostructures and Via Holes Using an Inductively Coupled Plasma System;Journal of The Electrochemical Society;1999-02-01

5. Fabrication of high-temperature superconductor Josephson junctions by focused ion beam milling;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1997-11

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