Low‐Pressure Etching of Nanostructures and Via Holes Using an Inductively Coupled Plasma System-Reference-Cited by-同舟云学术

Low‐Pressure Etching of Nanostructures and Via Holes Using an Inductively Coupled Plasma System

Published:1999-02-01 Issue:2 Volume:146 Page:775-779
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Berg E. W.¹,Pang S. W.¹

Affiliation:

1. Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109-2122, United States of America

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.1391680/pdf

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