Time-multiplexed, inductively coupled plasma process with separate SiCl[sub 4] and O[sub 2] steps for etching of GaAs with high selectivity-Reference-Cited by-同舟云学术

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Time-multiplexed, inductively coupled plasma process with separate SiCl[sub 4] and O[sub 2] steps for etching of GaAs with high selectivity

Published:2009 Issue:5 Volume:27 Page:2270
ISSN:1071-1023
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Golka S.,Arens M.,Reetz M.,Kwapien T.,Bouchoule S.,Patriarche G.

Publisher

American Vacuum Society

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dry etching of epitaxial InGaAs/InAlAs/InAlGaAs structures for fabrication of photonic integrated circuits;Optical Materials Express;2024-01-17

2. Influence of plasma process on III-V/Ge multijunction solar cell via etching;Solar Energy Materials and Solar Cells;2019-06

3. Advanced inductively coupled plasma etching processes for fabrication of resonator-quantum well infrared photodetector;Infrared Physics & Technology;2015-05

4. Fabrication of resonator-quantum well infrared photodetector test devices and focal plane arrays;SPIE Proceedings;2014-10-10

5. Self-organized fabrication of periodic arrays of vertical, ultra-thin nanopillars on GaAs surfaces;physica status solidi (a);2014-09-05

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