Hydrogen etching of the SiC(0001) surface at moderate temperature-Reference-Cited by-同舟云学术

Hydrogen etching of the SiC(0001) surface at moderate temperature

Published:2021-09 Issue:5 Volume:39 Page:052801
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B
language:en
Short-container-title:Journal of Vacuum Science & Technology B

Author:

Hamasaki Toshiya¹,Yagyu Kazuma²^ORCID,Mitani Hisashi¹,Nishida Takashi³,Tochihara Hiroshi²⁴^ORCID,Suzuki Takayuki²^ORCID

Affiliation:

1. Department of Physics, Fukuoka University of Education, Munakata, Fukuoka 811-4192, Japan

2. Department of Electronics Engineering and Computer Science, Fukuoka University, Fukuoka 814-0180, Japan

3. Department of Electrical Engineering, Fukuoka University, Fukuoka 814-0180, Japan

4. Faculty of Engineering Sciences, Kyushu University, Fukuoka 816-8580, Japan

Funder

Central Research Institute, Fukuoka University

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

https://avs.scitation.org/doi/pdf/10.1116/6.0001147

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