Process integration issues for a 0.25 μm n‐channel metal‐oxide‐semiconductor technology-Reference-Cited by-同舟云学术

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Process integration issues for a 0.25 μm n‐channel metal‐oxide‐semiconductor technology

Published:1986-05 Issue:3 Volume:4 Page:832-837
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Mele T. C.,Scarpulla J.,Nulman J.,Krusius J. P.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.573785

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characteristics of submicrometer gaps in buried-channel CCD structures;IEEE Transactions on Electron Devices;1991-05

2. STEM‐EDX Dopant Profiling of S‐D Implants in Submicron FETs;Journal of The Electrochemical Society;1989-12-01

3. Low-thermal-budget process modeling with the PREDICT computer program;IEEE Transactions on Electron Devices;1988-03

4. Improved statistical method for extraction of MOSFET effective channel length and resistance;IEEE Transactions on Electron Devices;1987-06

5. Process modeling for submicron complementary metal‐oxide‐semiconductor very large scale integrated circuits;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1986-05

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