Thermally stable device isolation by inert gas heavy ion implantation in AlGaN/GaN HEMTs on Si-Reference-Cited by-同舟云学术

Thermally stable device isolation by inert gas heavy ion implantation in AlGaN/GaN HEMTs on Si

Published:2016-07 Issue:4 Volume:34 Page:042203
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
language:en
Short-container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena

Author:

Arulkumaran Subramaniam,Ranjan Kumud,Ng Geok Ing,Kennedy John,Murmu Peter P.,Bhat Thirumaleshwara N.,Tripathy Sudhiranjan

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/pdf/10.1116/1.4955152

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