Plasma-induced energy band evolution for two-dimensional heterogeneous anti-ambipolar transistors-Reference-Cited by-同舟云学术

Plasma-induced energy band evolution for two-dimensional heterogeneous anti-ambipolar transistors

Published:2023-08-22 Issue:5 Volume:41 Page:
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B
language:en
Short-container-title:

Author:

Shahi Simran¹^ORCID,Ahmed Asma¹^ORCID,Yang Ruizhe²^ORCID,Cabanillas Anthony¹,Chakravarty Anindita¹,Liu Maomao¹,Jaiswal Hemendra Nath¹,Fu Yu³,Guo Yutong¹,Jadeja Satyajeetsinh Shaileshsin¹,Murugesan Hariharan¹,Butler Anthony³,Chen Chu Te³^ORCID,Muhigirwa Joel¹,Enaitalla Mohamed¹,Liu Jun²^ORCID,Yao Fei³^ORCID,Li Huamin¹^ORCID

Affiliation:

1. Department of Electrical Engineering, University at Buffalo, The State University of New York 1 , Buffalo, New York 14260

2. Department of Mechanical and Aerospace Engineering, University at Buffalo, The State University of New York 2 , Buffalo, New York 14260

3. Department of Materials Design and Innovation, University at Buffalo, The State University of New York 3 , Buffalo, New York 14260

Abstract

With the rise of two-dimensional (2D) materials and nanoelectronics, compatible processes based on existing Si technologies are highly demanded to enable new and superior device functions. In this study, we utilized an O2 plasma treatment as a compatible and tunable method for anionic substitution doping in 2D WSe2. With an introduced WOx layer, moderate or even degenerate doping was realized to enhance hole transport in WSe2. By combining with 2D MoS2, an evolution of the 2D heterogeneous junction, in terms of the energy band structure and charge transport, was comprehensively investigated as a function of applied electric fields. The heterogeneous WSe2/MoS2 junction can function as an antiambipolar transistor and exhibit exceptional and well-balanced performance, including a superior peak-valley ratio of 2.4 × 105 and a high current density of 55 nA/μm. This work highlights the immense potential of 2D materials and their engineering to seamlessly integrate with existing semiconductor technology and enhance the efficiency of future nanoelectronics.

Funder

National Science Foundation

New York State Center of Excellence in Materials Informatics

Office of the Vice President for Research and Economic Development, University at Buffalo

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

https://pubs.aip.org/avs/jvb/article-pdf/doi/10.1116/6.0002888/18093378/053202_1_6.0002888.pdf

Reference62 articles.

1. Promises and prospects of two-dimensional transistors

2. Two-dimensional semiconductors for transistors

3. Two-dimensional transistors beyond graphene and TMDCs

4. The Trend of 2D Transistors toward Integrated Circuits: Scaling Down and New Mechanisms

5. Two dimensional semiconducting materials for ultimately scaled transistors