High density plasma etching of titanium nitride metal gate electrodes for fully depleted silicon-on-insulator subthreshold transistor integration
Author:
Publisher
American Vacuum Society
Subject
Electrical and Electronic Engineering,Condensed Matter Physics
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Plasma processing for advanced microelectronics beyond CMOS;Journal of Applied Physics;2021-08-28
2. Thermal gas-phase etching of titanium nitride (TiN) by thionyl chloride (SOCl2);Applied Surface Science;2021-02
3. Influence of C2F6Addition to Cl2/Ar Gas on Nanometer-Scale Etch Characteristics of TiN Thin Films Using Inductively Coupled Plasma;ECS Journal of Solid State Science and Technology;2018
4. Selective dry etching of TiN nanostructures over SiO2 nanotrenches using a Cl2/Ar/N2 inductively coupled plasma;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2016-03
5. Chemical Etching and Patterning of Copper, Silver, and Gold Films at Low Temperatures;ECS Journal of Solid State Science and Technology;2014-10-29
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