Influence of active nitrogen species on high temperature limitations for (0001̱) GaN growth by rf plasma-assisted molecular beam epitaxy-Reference-Cited by-同舟云学术

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Influence of active nitrogen species on high temperature limitations for (0001̱) GaN growth by rf plasma-assisted molecular beam epitaxy

Published:1999 Issue:4 Volume:17 Page:1654
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Myers T. H.,Millecchia M. R.,Ptak A. J.,Ziemer K. S.,Stinespring C. D.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 43 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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4. Influence of the atom source operating parameters on the structural and optical properties of In xGa 1 − xN nanowires grown by plasma-assisted molecular beam epitaxy;Journal of Applied Physics;2018-10-28

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