Dry etching of TiN/Al(Cu)/Si for very large scale integrated local interconnections-Reference-Cited by-同舟云学术

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Dry etching of TiN/Al(Cu)/Si for very large scale integrated local interconnections

Published:1990-05 Issue:3 Volume:8 Page:1498-1502
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Hu C.‐K.,Mazzeo N.,Basavaiah S.,Small M. B.,Choi K. W.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.576864

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electromigration study of copper lines on steps prepared by a plasma-based etch process;Journal of Applied Physics;2012-03-15

2. Process effects of copper film over a step etched with a plasma-based process;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2012-03

3. Approaches for patterning of aluminum;Microelectronic Engineering;1997-01

4. Electromigration failure mechanisms in bamboo-grained Al(Cu) interconnections;Thin Solid Films;1995-05

5. Fabrication of Tungsten Local Interconnect for VLSI Bipolar Technology;Journal of The Electrochemical Society;1993-10-01

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