Damage introduction in GaAs/AlGaAs and InGaAs/InP heterojunction bipolar transistor structures during electron cyclotron resonance plasma processing-Reference-Cited by-同舟云学术

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Damage introduction in GaAs/AlGaAs and InGaAs/InP heterojunction bipolar transistor structures during electron cyclotron resonance plasma processing

Published:1993-07 Issue:4 Volume:11 Page:1768-1771
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Ren F.,Fullowan T. R.,Pearton S. J.,Lothian J. R.,Esagui R.,Abernathy C. R.,Hobson W. S.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.578422

Cited by 24 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Defect-free etching process for GaAs/AlGaAs hetero-nanostructure using chlorine/argon mixed neutral beam;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2010-11

2. Dry Etching of Germanium by Using Inductively Coupled CF$_{4}$Plasma;Journal of the Korean Physical Society;2009-06-15

3. A Robust All-Wet-Etching Process for Mesa Formation of InGaAs–InP HBT Featuring High Uniformity and High Reproducibility;IEEE Transactions on Electron Devices;2004-08

4. Influence of PECVD deuterated SiNx on GaAs MESFETs and GaAs/AlGaAs HBTs;Solid-State Electronics;2002-09

5. Hydrogenation effects on AlGaAs/GaAs heterojunction bipolar transistors;Solid-State Electronics;2001-10

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