Epitaxial growth of the first two members of the Ban+1InnO2.5n+1 Ruddlesden–Popper homologous series

Author:

Hensling Felix V. E.1ORCID,Smeaton Michelle A.1ORCID,Show Veronica2,Azizie Kathy1ORCID,Barone Matthew R.12ORCID,Kourkoutis Lena F.34ORCID,Schlom Darrell G.145ORCID

Affiliation:

1. Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853

2. Platform for the Accelerated Realization, Analysis, and Discovery of Interface Materials (PARADIM), Cornell University, Ithaca, New York 14853

3. School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853

4. Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853

5. Leibniz-Institut für Kristallzüchtung, Max-Born-Strasse 2, 12849 Berlin, Germany

Abstract

We demonstrate the epitaxial growth of the first two members, and the [Formula: see text] member of the homologous Ruddlesden–Popper series of [Formula: see text] of which the [Formula: see text] member was previously unknown. The films were grown by suboxide molecular-beam epitaxy where the indium is provided by a molecular beam of indium-suboxide [[Formula: see text]O (g)]. To facilitate ex situ characterization of the highly hygroscopic barium indate films, a capping layer of amorphous [Formula: see text] was deposited prior to air exposure. The structural quality of the films was assessed by x-ray diffraction, reflective high-energy electron diffraction, and scanning transmission electron microscopy.

Funder

Alexander von Humboldt-Stiftung

National Science Foundation

Gordon and Betty Moore Foundation, EPiQS Initiative

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

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