Effects of channel dimensions on performance of a-InGaZnO4 thin-film transistors-Reference-Cited by-同舟云学术

Effects of channel dimensions on performance of a-InGaZnO4 thin-film transistors

Published:2011-03 Issue:2 Volume:29 Page:021203
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
language:en
Short-container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena

Author:

Heo Young-Woo,Cho Kwang-Min,Sun Sang-Yun,Kim Se-Yun,Lee Joon-Hyung,Kim Jeong-Joo,Norton D. P.,Pearton S. J.

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/pdf/10.1116/1.3556921

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