Metamorphic heterojunction bipolar transistors and P–I–N photodiodes on GaAs substrates prepared by molecular beam epitaxy-Reference-Cited by-同舟云学术

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Metamorphic heterojunction bipolar transistors and P–I–N photodiodes on GaAs substrates prepared by molecular beam epitaxy

Published:2001 Issue:4 Volume:19 Page:1505
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Hoke W. E.,Lemonias P. J.,Kennedy T. D.,Torabi A.,Tong E. K.,Bourque R. J.,Jang J.-H.,Cueva G.,Dumka D. C.,Adesida I.,Chang K. L.,Hsieh K. C.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study of electrical properties of Al/Si₃N₄/n-GaAs MIS capacitors deposited at low and high frequency PECVD;The European Physical Journal Applied Physics;2022

2. Optical, Structural and Morphological Characterization of a Zn-Doped GaAs Semiconducting Thin Film Produced by Thermionic Vacuum Arc;Materials Focus;2015-12-01

3. Surface, Nanomechanical, and Optical Properties of Mo-Doped GeGaAs Thin Film Deposited by Thermionic Vacuum Arc;Journal of Electronic Materials;2015-10-28

4. Some physical properties of a Si-doped nano-crystalline GaAs thin film grown by thermionic vacuum arc;Vacuum;2015-09

5. Direct and fast growth of GaAs thin films on glass and polyethylene terephthalate substrates using a thermionic vacuum arc;Journal of Materials Science: Materials in Electronics;2015-01-08

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