Structure and defects of epitaxial Si(111) layers on Y[sub 2]O[sub 3](111)/Si(111) support systems-Reference-Cited by-同舟云学术

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Structure and defects of epitaxial Si(111) layers on Y[sub 2]O[sub 3](111)/Si(111) support systems

Published:2009 Issue:1 Volume:27 Page:305
ISSN:1071-1023
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Borschel C.,Ronning C.,Hofsäss H.,Giussani A.,Zaumseil P.,Wenger Ch.,Storck P.,Schroeder T.

Publisher

American Vacuum Society

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Y2O3:Yb3+, Tm3+/ZnO composite with a heterojunction structure and upconversion function for the photocatalytic degradation of organic dyes;RSC Advances;2021

2. Ultraviolet GaN photodetectors on Si via oxide buffer heterostructures with integrated short period oxide-based distributed Bragg reflectors and leakage suppressing metal-oxide-semiconductor contacts;Journal of Applied Physics;2014-08-28

3. Enhanced ultraviolet GaN photo-detector response on Si(111) via engineered oxide buffers with embedded Y2O3/Si distributed Bragg reflectors;Applied Physics Letters;2014-01-06

4. Complex interface and growth analysis of single crystalline epi-Si(111)/Y2 O3 / Pr2 O3 /Si(111) heterostructures: Strain engineering by oxide buffer control;Surface and Interface Analysis;2011-03-08

5. Epitaxy;Introduction to Microfabrication;2010-11-09

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