Field emitter electrostatics: Efficient improved simulation technique for highly precise calculation of field enhancement factors

Author:

Dall’Agnol Fernando F.1ORCID,de Assis Thiago A.23ORCID,Forbes Richard G.4ORCID

Affiliation:

1. Department of Exact Sciences and Education (CEE), Universidade Federal de Santa Catarina, Campus Blumenau, Rua João Pessoa, 2514, Velha, Blumenau 89036-004, Santa Catarina, Brazil

2. Instituto de Física, Universidade Federal da Bahia, Campus Universitário da Federação, Rua Barão de Jeremoabo s/n, 40170-115, Salvador, Bahia, Brazil

3. Instituto de Física, Universidade Federal Fluminense, Avenida Litorânea s/n, 24210-340, Niterói, Rio de Janeiro, Brazil

4. Advanced Technology Institute & School of Computer Science and Electronic Engineering, University of Surrey, Guildford, Surrey GU2 7XH, United Kingdom

Abstract

When solving the Laplace equation numerically via computer simulation, in order to determine the field values at the surface of a shape model that represents a field emitter, it is necessary to define a simulation box and, within this, a simulation domain. This domain must not be so small that the box boundaries have an undesirable influence on the predicted field values. A recent paper discussed the situation of cylindrically symmetric emitter models that stand on one of a pair of well-separated parallel plates. This geometry can be simulated by using two-dimensional domains. For a cylindrical simulation box, formulas have previously been presented that define the minimum domain dimensions (MDD) (height and radius) needed to evaluate the apex value of the field enhancement factor for this type of model, with an error-magnitude never larger than a “tolerance” [Formula: see text]. This MDD criterion helps to avoid inadvertent errors and oversized domains. The present article discusses (in greater depth than previously) a significant improvement in the MDD method; this improvement has been called the MDD extrapolation technique (MDDET). By carrying out two simulations with relatively small MDD values, it is possible to achieve a level of precision comparable with the results of carrying out a single simulation using a much larger simulation domain. For some simulations, this could result in significant savings of memory requirements and computing time. Following a brief restatement of the original MDD method, the MDDET method is illustrated by applying it to the hemiellipsoid-on-plane and hemisphere-on-cylindrical-post emitter shape models.

Funder

Conselho Nacional de Desenvolvimento Científico e Tecnológico

Fundação Carlos Chagas Filho de Amparo à Pesquisa do Estado do Rio de Janeiro

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

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