Investigation of low-fluence hydrogen implantation-induced cracking in B doped Si0.70Ge0.30

Author:

Chen Da1,Guo Qinglei2,Zhang Nan1,Wang Bei1,Xu Anli1,Li Ya1,Yang Siwei3,Wang Gang1

Affiliation:

1. Department of Microelectronic Science and Engineering, Faculty of Science, Ningbo University, Ningbo 315211, China

2. Department of Materials Science, Fudan University, Shanghai 200433, China

3. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Shanghai 200500, China

Funder

General Financial Grant from China Postdoctoral Science Foundation

K. C. Wong Magna Fund in Ningbo University

Open Fund Key Disciplines in Colleges and Universities of Zhejiang

National Natural Science Foundation of China (NSFC)

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

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