Investigation of low-fluence hydrogen implantation-induced cracking in B doped Si0.70Ge0.30-Reference-Cited by-同舟云学术

Investigation of low-fluence hydrogen implantation-induced cracking in B doped Si0.70Ge0.30

Published:2017-07 Issue:4 Volume:35 Page:041203
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
language:en
Short-container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena

Author:

Chen Da¹,Guo Qinglei²,Zhang Nan¹,Wang Bei¹,Xu Anli¹,Li Ya¹,Yang Siwei³,Wang Gang¹

Affiliation:

1. Department of Microelectronic Science and Engineering, Faculty of Science, Ningbo University, Ningbo 315211, China

2. Department of Materials Science, Fudan University, Shanghai 200433, China

3. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Shanghai 200500, China

Funder

General Financial Grant from China Postdoctoral Science Foundation

K. C. Wong Magna Fund in Ningbo University

Open Fund Key Disciplines in Colleges and Universities of Zhejiang

National Natural Science Foundation of China (NSFC)

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/pdf/10.1116/1.4986479

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Vegard's-law-like dependence of the activation energy of blistering on the x composition in hydrogenated a-SixGe1-x;Journal of Alloys and Compounds;2018-09

2. Strain engineering and mechanical assembly of silicon/germanium nanomembranes;Materials Science and Engineering: R: Reports;2018-06