Effect of low dose γ-irradiation on DC performance of circular AlGaN/GaN high electron mobility transistors-Reference-Cited by-同舟云学术

Effect of low dose γ-irradiation on DC performance of circular AlGaN/GaN high electron mobility transistors

Published:2014-05 Issue:3 Volume:32 Page:031203
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
language:en
Short-container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena

Author:

Hwang Ya-Hsi,Hsieh Yueh-Ling,Lei Lei,Li Shun,Ren Fan,Pearton Stephen J.,Yadav Anupama,Schwarz Casey,Shatkhin Max,Wang Luther,Flitsiyan Elena,Chernyak Leonid,Baca Albert G.,Allerman Andrew A.,Sanchez Carlos A.,Kravchenko I. I.

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/pdf/10.1116/1.4868632

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