X‐ray lithography source using a stationary solid Pd target
Author:
Publisher
American Vacuum Society
Subject
General Engineering
Link
http://avs.scitation.org/doi/pdf/10.1116/1.570360
Cited by 26 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
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3. GaAs metal-oxide-semiconductor device with HfO2∕TaN gate stack and thermal nitridation surface passivation;Applied Physics Letters;2007-06-18
4. Broad area, intense electron beam source for high resolution, high throughput semiconductor lithography;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1993-09
5. Reliability of gate dielectrics of MOSFETs exposed to synchrotron radiation;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;1992-08
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