High Schottky barriers on and thermally induced processes at the Au– GaAs(110) interface-Reference-Cited by-同舟云学术

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High Schottky barriers on and thermally induced processes at the Au– GaAs(110) interface

Published:1982-07 Issue:2 Volume:21 Page:585-589
ISSN:0022-5355
Container-title:Journal of Vacuum Science and Technology
language:en
Short-container-title:Journal of Vacuum Science and Technology

Author:

Petro W. G.,Babalola I. A.,Skeath P.,Su C. Y.,Hino I.,Lindau I.,Spicer W. E.

Publisher

American Vacuum Society

Subject

General Engineering

Link

http://avs.scitation.org/doi/pdf/10.1116/1.571791

Cited by 34 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. GOLD DEPOSITION ON GaAs(001) SURFACES: MOLECULAR-DYNAMICS SIMULATIONS;International Journal of Modern Physics C;2002-07

2. Electronic structure and Schottky-barrier formation on GaAs (100) surfaces prepared by thermal desorption of a protective arsenic coating;Physical Review B;1992-05-15

3. Au and Al Schottky barrier formation on GaAs (100) surfaces prepared by thermal desorption of a protective arsenic coating;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1991-07

4. X-Ray absorption spectroscopy under conditions of total external reflection: application to the structural characterisation of the Cu/GaAs(100) interface;Faraday Discussions of the Chemical Society;1990

5. Room-temperature growth of two-dimensional gold films on GaAs(001);Physical Review B;1987-10-15

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