Sub-30 nm pitch line-space patterning of semiconductor and dielectric materials using directed self-assembly-Reference-Cited by-同舟云学术

Sub-30 nm pitch line-space patterning of semiconductor and dielectric materials using directed self-assembly

Published:2012-11 Issue:6 Volume:30 Page:06F205
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
language:en
Short-container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena

Author:

Tsai Hsin-Yu,Miyazoe Hiroyuki,Engelmann Sebastian,To Bang,Sikorski Ed,Bucchignano Jim,Klaus Dave,Liu Chi-Chun,Cheng Joy,Sanders Dan,Fuller Nicholas,Guillorn Michael

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/pdf/10.1116/1.4767237

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