Comparison of fast three-dimensional simulation and actinic inspection for extreme ultraviolet masks with buried defects and absorber features

Author:

Clifford Chris H.,Wiraatmadja Sandy,Chan Tina T.,Neureuther Andrew R.,Goldberg Kenneth A.,Mochi Iacopo,Liang Ted

Publisher

American Vacuum Society

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Fast optimization of defect compensation and optical proximity correction for extreme ultraviolet lithography mask;Optics Communications;2019-12

2. EUV actinic brightfield mask microscopy for predicting printed defect images;SPIE Proceedings;2015-11-03

3. Actinic characterization of extreme ultraviolet bump-type phase defects;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2011-11

4. Compensation methods for buried defects in extreme ultraviolet lithography masks;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2011-01

5. Expansion of image interaction by the eigenfunction of the transmission cross coefficient to show the interaction between features;Journal of the Optical Society of America A;2010-08-05

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