Low‐temperature (300 °C) stacked oxide–nitride–oxide gate dielectrics with remote plasma‐enhanced chemical vapor deposition-Reference-Cited by-同舟云学术

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Low‐temperature (300 °C) stacked oxide–nitride–oxide gate dielectrics with remote plasma‐enhanced chemical vapor deposition

Published:1991-05 Issue:3 Volume:9 Page:1094-1098
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Hattangady S. V.,Fountain G. G.,Alley R. G.,Rudder R. A.,Markunas R. J.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.577582

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Atomic transport during growth of ultrathin dielectrics on silicon;Surface Science Reports;1999-12

2. Atomic transport across the interfaces during the formation of ultrathin silicon oxide/nitride/oxide films;Applied Physics Letters;1998-10-05

3. Ultrathin device quality oxide‐nitride‐oxide heterostructure formed by remote plasma enhanced chemical vapor deposition;Applied Physics Letters;1994-04-25

4. Silicon Oxynitride and Oxide-Nitride-Oxide Gate Dielectrics by Combined Plasma-Rapid Thermal Processing;MRS Proceedings;1994

5. HgCdTe Surface Cleanup and Etch Using a Remote Hydrogen Plasma;MRS Proceedings;1994

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