Effects of defects on metal‐insulator semiconductor properties of molecular‐beam epitaxy grown HgCdTe
Author:
Publisher
American Vacuum Society
Subject
Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Link
http://avs.scitation.org/doi/pdf/10.1116/1.576214
Cited by 17 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Admittance of MIS Structures Based on MBE Hg1 – xCdxTe (x = 0.21–0.23) in a Wide Temperature Range;Journal of Communications Technology and Electronics;2018-09
2. Electrical characterizations of MIS structures based on variable-gap n(p )-HgCdTe grown by MBE on Si(0 1 3) substrates;Infrared Physics & Technology;2017-12
3. Temperature Dependences of the Product of the Differential Resistance by the Area in MIS-Structures Based on Cd x Hg1–x Te Grown by Molecularbeam Epitaxy on Alternative Si and GaAs Substrates;Russian Physics Journal;2017-05-31
4. Admittance measurements in the temperature range (8−77) K for characterization of MIS structures based on MBE n -Hg 0.78 Cd 0.22 Te with and without graded-gap layers;Journal of Physics and Chemistry of Solids;2017-03
5. Admittance of metal–insulator–semiconductor structures based on graded-gap HgCdTe grown by molecular-beam epitaxy on GaAs substrates;Infrared Physics & Technology;2015-07
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