Negative electron-beam resist hard mask ion beam etching process for the fabrication of nanoscale magnetic tunnel junctions-Reference-Cited by-同舟云学术

Negative electron-beam resist hard mask ion beam etching process for the fabrication of nanoscale magnetic tunnel junctions

Published:2012-11 Issue:6 Volume:30 Page:06FA01
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
language:en
Short-container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena

Author:

Chun Sung-Woo,Kim Daehong,Kwon Jihun,Kim Bongho,Lee Hyungyu,Lee Seung-Beck

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/pdf/10.1116/1.4767123

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