(100) and (111) Ni films epitaxially grown on Cu by the metal–metal epitaxy on silicon technique near room temperatures-Reference-Cited by-同舟云学术

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(100) and (111) Ni films epitaxially grown on Cu by the metal–metal epitaxy on silicon technique near room temperatures

Published:1990-09 Issue:5 Volume:8 Page:3779-3784
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Chang Chin‐An

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.576493

Cited by 28 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Switching properties of SrRuO 3 /Pb(Zr 0.4 Ti 0.6 )O 3 /SrRuO 3 capacitor grown on Cu-coated Si substrate measured at various temperatures;EPL (Europhysics Letters);2014-09-01

2. Heteroepitaxial growth of sixfold symmetric osmium on Si (111) and Si (100);Applied Physics Letters;2007-03-19

3. Kinetic Monte Carlo Study of Submonolayer Heteroepitaxial Growth Comparing Cu/Ni and Pt/Ni on Ni(100);The Journal of Physical Chemistry B;2005-07-13

4. Grain structure;Materials Science in Microelectronics I;2005

5. Orientation of metal films deposited by sputtering using Ar/N2 gas mixtures;Thin Solid Films;2004-12

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