Challenges in advanced semiconductor technology in the ulsl era for computer applications-Reference-Cited by-同舟云学术

Challenges in advanced semiconductor technology in the ulsl era for computer applications

Published:1987-07 Issue:4 Volume:16 Page:223-243
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:JEM

Author:

Osburn Carlton M.,Reisman Arnold

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/BF02653360.pdf

Reference162 articles.

1. A. Reisman, Proc. IEEE,71, 550 (1983).

2. A. Reisman, “The Technology and Engineering Challenges Posed by Very Large Scale Integration,” Proc. of the Tutorial Symp. on Semiconductor Technology, Electrochemical Society Proceedings,82-5, 221 (1982).

3. D. D. Tang and T. H. Ning, “Advances in Bipolar IC Technology,” IEEE 1985 CICC, 180 (1985).

4. “US Midyear Market Report,” Electronics, 105, July 10,1986.

5. W. C. Holton and R. K. Cavin, III, “A Perspective on CMOS Technology Trends,” IEEE, to be published (1986).

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