Optical transition and carrier relaxation in self-assembled InAs/GaAs quantum dots with InAlAs and InGaAs combination cap layer by resonant excitation
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Engineering,General Mathematics
Link
http://link.springer.com/content/pdf/10.1007/s11741-010-0202-3.pdf
Reference18 articles.
1. Lin S Y, Tsai Y R, Lee S C. Transport characteristics of InAs/GaAs quantum-dot infrared photodetectors [J]. Applied Physics Letters, 2003, 83(4): 752–754.
2. Pan D, Towe E. Normal-incidence intersubband (In,Ga)As/GaAs quantum dot infrared photodetectors [J]. Applied Physics Letters, 1998, 73(14): 1937–1939.
3. Liu H C, Gao M, McCaffrey J, Wasilewski Z R, Farard S. Quantum dot infrared photodetectors [J]. Applied Physics Letters, 2001, 78(1): 79–81.
4. Lee S W, Hirakawa K, Shiimada Y. Bound-to-continuum intersubband photoconductivity of self-assembled InAs quantum dots in modulation-doped heterostructures [J]. Applied Physics Letters, 1999, 75(10): 1428–1430.
5. Chu L, Zrenner A, Böhm G, Abstreiter G. Lateral intersubband photocurrent spectroscopy on InAs/GaAs quantum dots [J]. Applied Physics Letters, 2000, 76(14): 1944–1946.
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