A Descriptive Analysis of Different Dual-Port and Single-Port 11T SRAM Cells for Low-Voltage Operations
Author:
Publisher
Springer Nature Singapore
Link
https://link.springer.com/content/pdf/10.1007/978-981-99-7077-3_43
Reference18 articles.
1. Abbasian E, Gholipour M (2022) Robust transmission gate-based 10T subthreshold SRAM for internet-of-things applications. Semicond Sci Tech
2. Chiu W, Hu Y, Tu M, Zhao J, Jou S, Chuang C (2013) 40 nm 0.32 V 3.5 MHz 11T single-ended bit-interleaving subthreshold SRAM with data-aware write-assist. In: Symposium on Low Power Electronics and Design, 978-1-4799-1235-3/13
3. Cho K, Park J, Oh TW, Jung OK (2020) One sided Schmitt-Trigger based 9T SRAM cell for near threshold operation. IEEE Trans Circuits Syst I Regul Pap 67(5):1551–1561
4. Divya D, Mittal P, Rawat B, Kumar B (2022) Design and performance analysis of high-performance low power voltage mode sense amplifier for static RAM. Inter J Adv Elect Elect Eng 19(2):145–154. https://doi.org/10.15598/aeee.v19i2.3821
5. Eslami N, Ebrahimi B, Shakouri E, Najaf D (2020) A single-ended low leakage and low voltage 10T SRAM cell with high yield. Analog Integrat Circuits Sig Proces 105:263–274
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