Advances in Sensing Methodology for Resistive RAM
Author:
Publisher
Springer Nature Singapore
Link
https://link.springer.com/content/pdf/10.1007/978-981-19-2308-1_33
Reference23 articles.
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3. Wong H-S-P, Salahuddin S (2015) Memory leads the way to better computing. Nature Nanotechnol 10(3):191–194
4. Xiao TP et al (2019) Energy and performance benchmarking of a domain wall-magnetic tunnel junction multibit adder. IEEE J Explor Solid-State Comput Dev. Circuits 5(2):188–196
5. Jain P et al (2019) A 3.6 Mb 10.1 Mb/mm2 embedded non-volatile ReRAM macro in 22 nm FinFET technology with adaptive forming/set/reset schemes yielding down to 0.5 V with sensing time of 5 ns at 0.7 V. In: IEEE international solid-state circuits conference (ISSCC) digital technical papers, Feb 2019, pp 212–214
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