Variability Investigation of Double Gate JunctionLess (DG-JL) Transistor for Circuit Design Perspective
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Publisher
Springer Singapore
Link
http://link.springer.com/content/pdf/10.1007/978-981-10-7470-7_49
Reference10 articles.
1. Colinge, J.P., et al.: Nanowire transistors without junctions. Nature Nanotechnol. 5(3), 225–229 (2010)
2. Choi, S.J., et al.: Nonvolatile memory by all-around-gate junctionless transistor composed of silicon nanowireon bulk substrate. IEEE Electron Device Lett. 32(5), 602–604 (2011)
3. Han, M.H., et al.: Device and circuit performance estimation of junctionless bulk FinFETs. IEEE Trans. Electron Devices 60(6), 1807–1813 (2013)
4. Singh, B., et al.: Analytical modeling of sub-threshold characteristics of ion-implanted symmetric double gate junctionless field effect transistor. Mater. Sci. Semicond. Process. 58, 82–88 (2017)
5. Dubey, S., et al.: A two-dimensional model for the potential distribution and threshold voltage of short-channel double gate metal oxide semiconductor field-effect transistors with a vertical Gaussian-like doping profile. J. Appl. Phys. 108(3), 034518, 7 (2010)
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1. Impact of different localized trap charge profiles on the short channel double gate junctionless nanowire transistor based inverter and Ring Oscillator circuit;AEU - International Journal of Electronics and Communications;2019-08
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