Impact of different localized trap charge profiles on the short channel double gate junctionless nanowire transistor based inverter and Ring Oscillator circuit-Reference-Cited by-同舟云学术

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Impact of different localized trap charge profiles on the short channel double gate junctionless nanowire transistor based inverter and Ring Oscillator circuit

Published:2019-08 Issue: Volume:108 Page:251-261
ISSN:1434-8411
Container-title:AEU - International Journal of Electronics and Communications
language:en
Short-container-title:AEU - International Journal of Electronics and Communications

Author:

Garg Neha,Pratap Yogesh,Gupta Mridula,Kabra Sneha

Funder

Govt. of India and Shaheed Rajguru College of Applied Sciences for Women, University of Delhi

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering

Reference32 articles.

1. CMOS past, present and future;Radamson,2018

2. A novel PNPN-like Z-shaped tunnel field-effect transistor with improved ambipolar behavior and RF performance;Imenabadi;IEEE Trans Electron Dev,2017

3. A resonant tunneling nanowire field effect transistor with physical contractions: a negative differential resistance device for low power very large scale integration applications;Abadi;J Electron Mater,2018

4. Ground plane fin-shaped field effect transistor (GP-FinFET): a FinFET for low leakage power circuits;Saremi;J Microelectron Eng,2012

5. Ground plane SOI MOSFET based SRAM with consideration of process variation;Saremi,2010

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