Identification and Detection of RTN in Short-Channel MOS Devices of Communication Power Supply-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Identification and Detection of RTN in Short-Channel MOS Devices of Communication Power Supply

Published:2021 Issue: Volume: Page:95-107
ISSN:1876-1100
Container-title:Advances in Electrical and Electronic Engineering and Computer Science
language:
Short-container-title:

Author:

Fan Xinxin,Yan Hongmei,Xu Xin,Yao Hui

Publisher

Springer Singapore

Link

https://link.springer.com/content/pdf/10.1007/978-981-33-6490-5_9

Reference14 articles.

1. Kola SR, Li Y, Thoti N (2020) Random telegraph noise in gate-all-around silicon nanowire MOSFETs induced by a single charge trap or random interface traps. J Comput Electron 19(1):12–16

2. Fan XX, Yang LY, Chen XG et al (2018) Detection and analysis of random telegraph signal noise in P-MOSFET. Dian zi Jishu Yingyong 44(8):44–46

3. Möhle C, Zota CB, Hellenbrand M et al (2017) 1/ f and RTN in InGaAs Nanowire MOSFETs. Microelectron Eng 36(6):52–55

4. Cai XJ (2020) Quantum depraving induced by non-markovian random telegraph noise. Sci Rep 10(1):18–20

5. Both TH, Croon JA, Silva MD et al (2017) Autocorrelation analysis as a technique to study physical mechanisms of MOSFET low-frequency noise. IEEE Trans Electron Devices 18(6):1–8

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An Extended Method to Analyze Boron Diffusion Defects in 16 nm Node High-Voltage FinFETs;2023 35th International Conference on Microelectronic Test Structure (ICMTS);2023-03-27

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP