An Extended Method to Analyze Boron Diffusion Defects in 16 nm Node High-Voltage FinFETs-Reference-Cited by-同舟云学术

An Extended Method to Analyze Boron Diffusion Defects in 16 nm Node High-Voltage FinFETs

Published:2023-03-27 Issue: Volume: Page:
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Container-title:2023 35th International Conference on Microelectronic Test Structure (ICMTS)
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Author:

Kuo Ting-Tzu¹,Chen Ying-Chung¹,Chang Ting-Chang²,Ciou Fong-Min³,Yeh Chien-Hung⁴,Chen Po-Hsun⁵,Sze Simon M⁶

Affiliation:

1. National Sun Yat-sen University,Department of Electrical Engineering,Kaohsiung,Taiwan,80424

2. National Sun Yat-Sen University,Department of Physics, and also with College of Semiconductor and Advanced Technology Research,Kaohsiung,Taiwan,804

3. National Sun Yat-sen University,Department of Physics,Kaohsiung,Taiwan,80424

4. National Sun Yat-sen University,Department of Photonics,Kaohsiung,Taiwan.,804

5. R. O. C. Naval Academy,Department of Applied Science,Kaohsiung,Taiwan,813

6. National Yang Ming Chiao Tung University,Hsinchu,Taiwan,300

Funder

National Science and Technology Council

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10094038/10094053/10094125.pdf?arnumber=10094125

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