Energy-Efficient SRAM Cell Design with Body Biasing-Reference-Cited by-同舟云学术

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Energy-Efficient SRAM Cell Design with Body Biasing

Published:2019 Issue: Volume: Page:377-385
ISSN:2367-3370
Container-title:Lecture Notes in Networks and Systems
language:
Short-container-title:

Author:

Kalyani P.,Madhavi Latha M.,Chandra Sekhar P.

Publisher

Springer Singapore

Link

http://link.springer.com/content/pdf/10.1007/978-981-13-3765-9_39

Reference24 articles.

1. Mostafa H, Anis M, Elmasry M (2011) Adaptive body bias for reducing the impacts of NBTI and process variations on 6T SRAM cells. IEEE Trans Circuits Syst I 58:2859–2871

2. Chen G, Sylvester D, Blaauw D, Mudge T (2010) Yield-driven near-threshold SRAM design. IEEE Trans Very Large Scale Integr (VLSI) Syst 18(11):1590

3. Kauppila AV, Bhuva BL, Kauppila JS, Massengill LW, Holman WT (2011) Impact of process variations on SRAM single event upsets. IEEE Trans Nucl Sci 58(3):834

4. Kim TT-H, Ba NL (2014) Design of a temperature-aware low-voltage SRAM with self-adjustable sensing margin enhancement for high-temperature applications up to 300 °C. IEEE J Solid-State Circuits 49(11):2534

5. Suthar R, Pande KS, Murty NS (2017) Leakage reduction in DT8T SRAM cell using body biasing technique. In: IEEE international symposium on nanoelectronic and information systems, pp 1–5

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analysis of SRAM cell design;Proceedings of the Third International Conference on Advanced Informatics for Computing Research - ICAICR '19;2019

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