1. Hwang CH, Li TY, Han MH, Lee KF, Cheng HW, Li Y (2009) Statistical analysis of metal gate workfunction variability, process variation, and random dopant fluctuation in nano-CMOS circuits. In: 2009 international conference on simulation of semiconductor processes and devices, September, IEEE, pp 1–4
2. Mathew L, Fossum JG (2008) U.S. Patent No. 7,470,951. Washington, DC, U.S. Patent and Trademark Office
3. Mathew L, Sadd M, Kalpat S, Zavala M, Stephens T, Mora R, ... Fossum JG (2005) Inverted T channel FET (ITFET)-fabrication and characteristics of vertical-horizontal, thin body, multi-gate, multi-orientation devices, ITFET SRAM bit-cell operation. A novel technology for 45nm and beyond CMOS. In: IEEE international electron devices meeting, 2005. IEDM Technical Digest, December, IEEE, pp 713–716
4. Paz BC, Pavanello MA, Cassé M, Barraud S, Reimbold G, Faynot O, ... Cerdeira A (2015) From double to triple gate: Modeling junctionless nanowire transistors. In: EUROSOI-ULIS 2015: 2015 joint international EUROSOI workshop and international conference on ultimate integration on silicon, January, IEEE, pp 5–8
5. Rollett J (1962) Stability and power-gain invariants of linear twoports. IRE Trans on Circuit Theory 9(1):29–32