Investigation of Structural and Electronic Properties of BaX (X = S, Se, and Te): A DFT Study-Reference-Cited by-同舟云学术

Investigation of Structural and Electronic Properties of BaX (X = S, Se, and Te): A DFT Study

Published:2020 Issue: Volume: Page:281-289
ISSN:2195-4356
Container-title:Lecture Notes in Mechanical Engineering
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Author:

Das Majumdar Agnibha,Munjal Neha,Kamboj Uma,Dogra Karan

Publisher

Springer Singapore

Link

http://link.springer.com/content/pdf/10.1007/978-981-15-4059-2_23

Reference9 articles.

1. Bouhemadu, A., Khenata, R., Zegrar, F., Sahnoun, M., Baltache, H., Reshak, A.H.: Ab initio study of structural, electronic, elastic and high pressure properties of barium chalcogenides. Comput. Mater. Sci. 38, 263–270 (2006)

2. Lin, G.Q., Gong, Hao, Ping, Wu: Electronic properties of barium chalcogenides from first-principles calculations: tailoring wide-band-gap II-VI semiconductor. Phys. Rev. B 71, 085203 (2005)

3. Tuncel, E., Colakoglu, K., Deligoz, E., Ciftci, Y.O.: A first-principles study on the structural, elastic, vibrational, and thermo dynamical properties of BaX (X = S, Se, and Te). J. Phys. Chem. Solids 70, 371–378 (2009)

4. Arya, Balwant S., Aynyas, Mahendra, Sanyal, Sankar P.: High pressure study of structural and elastic properties of barium chalcogenides. Indian J. Pure Appl. Phys. 46, 722–726 (2008)

5. Bhardwaj, P., Singh, S., Gaur, N.K.: Structural and elastic properties of barium chalcogenides (BaX, X = O, Se, Te) under high pressure. Cent. Eur. J. Phys. 6(2), 223–229 (2008)

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