Ab initio study of structural, electronic, elastic and high pressure properties of barium chalcogenides-Reference-Cited by-同舟云学术

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Ab initio study of structural, electronic, elastic and high pressure properties of barium chalcogenides

Published:2006-12 Issue:2 Volume:38 Page:263-270
ISSN:0927-0256
Container-title:Computational Materials Science
language:en
Short-container-title:Computational Materials Science

Author:

Bouhemadou A.,Khenata R.,Zegrar F.,Sahnoun M.,Baltache H.,Reshak A.H.

Publisher

Elsevier BV

Subject

Computational Mathematics,General Physics and Astronomy,Mechanics of Materials,General Materials Science,General Chemistry,General Computer Science

Reference44 articles.

1. Prediction of Semiconductor Material Properties by the Properties of Their Constituent Chemical Elements

2. Optical Absorption and Photoemission of Barium and Strontium Oxides, Sulfides, Selenides, and Tellurides

3. Fundamental Optical Absorption in the IIA-VIB Compounds

4. Electronic properties of barium chalcogenides from first-principles calculations: Tailoring wide-band-gap II-VI semiconductors

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