Unified Physical Parameters-Based Analytical Drain Current Model of Amorphous-InGaZnO TFTs for Emerging Display Technology
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Publisher
Springer Nature Singapore
Link
https://link.springer.com/content/pdf/10.1007/978-981-19-7982-8_45
Reference18 articles.
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2. Kamiya T, Nomura K, Hosono H (2010) Present status of amorphous In–Ga–Zn–O thin-film transistors. Sci Technol Adv Mater 11(4):044305
3. Tsuji H et al (2014) Efficient simulation model for amorphous In-Ga-Zn-O thin-film transistors. J Display Technol 10(2):101–106
4. Lee S, Striakhilev D, Jeon S, Nathan A (2014) Unified analytic model for current–voltage behavior in amorphous oxide semiconductor TFTs. IEEE Electron Device Lett 35(1):84–86
5. Deng W, Huang J, Ma X, Ning T (2014) An explicit surface-potentialbased model for amorphous IGZO thin-film transistors including both tail and deep states. IEEE Electron Device Lett 35(1):78–80
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