First-Principles Modeling and Calculations of HfO2/Si Interface in Nano Devices
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Publisher
Springer Singapore
Link
https://link.springer.com/content/pdf/10.1007/978-981-33-6606-0_53
Reference19 articles.
1. Robertson, J., and R.M. Wallace. 2015. High-κ materials and metal gates for CMOS applications. Materials Science and Engineering: R: Reports 88: 1–41.
2. Choi, M.J., H.H. Park, D.S. Jeong, et al. 2014. Atomic Layer Deposition of HfO2 Thin Films Using H2O2 as Oxidant. Applied Surface Science 301: 451–455.
3. Lu, W.J., Y.H. Dai, F.F. Wang, et al. 2017. Research on c-HfO2 (0 0 1)/α-Al2O3 (1–1 0 2) interface in CTM devices based on first principle theory. AIP Advances 7 (12): 125001.
4. Chagarov, E.A., M.S. Kavrik, Z.W. Fang, et al. 2018. Density-functional theory molecular dynamics simulations of a-HfO2/a-SiO2/SiGe and a-HfO2/a-SiO2/Ge with a-SiO2 and a-SiO suboxide interfacial layers. Applied Surface Science 443: 644–654.
5. Takagi, K., and T. Ono. 2018. First-principles study on leakage current caused by oxygen vacancies at HfO2/SiO2/Si interface. Japanese Journal of Applied Physics 57: 066501.
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