Stress Dependent Electrical Characteristics of Flexible a-IGZO TFTs
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Publisher
Springer Nature Singapore
Link
https://link.springer.com/content/pdf/10.1007/978-981-97-1571-8_13
Reference16 articles.
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2. H. Gleskova, S. Wagner, W. Soboyejo, Z. Suo, Electrical response of amorphous silicon thin-film transistors under mechanical strain. J. Appl. Phys. 92, 6224–6229 (2002). https://doi.org/10.1063/1.1513187
3. P.-C. Kuo, A. Jamshidi-Roudbari, M. Hatalis, Electrical characteristics and mechanical limitation of polycrystalline silicon thin film transistor on steel foil under strain, 1–2 (2009). https://doi.org/10.1109/isdrs.2009.5378058
4. N. Munzenrieder, K.H. Cherenack, G. Troster, The effects of mechanical bending and illumination on the performance of flexible IGZO TFTs. IEEE Trans. Electron Devices 58, 2041–2048 (2011). https://doi.org/10.1109/ted.2011.2143416
5. K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, H. Hosono, Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors. Nature 432, 488–492 (2004). https://doi.org/10.1038/nature03090
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