Behaviour of SiC Schottky Diode Temperature Sensors in 200–600 K
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Publisher
Springer Nature Singapore
Link
https://link.springer.com/content/pdf/10.1007/978-981-19-7993-4_43
Reference18 articles.
1. Baliga BJ (2006) Silicon carbide power devices. World Scientific.https://doi.org/10.1142/5986
2. Draghici F et al (2019) 400 °C sensor based on Ni/4H-SiC Schottky diode for reliable temperature monitoring in industrial environments. Sensors (Basel) 19:10. https://doi.org/10.3390/S19102384
3. Kranzer D et al (2018) Applications of SiC devices. In: Wide bandgap semiconductor power devices: materials, physics, design, and applications, pp 345–371. Elsevier. https://doi.org/10.1016/B978-0-08-102306-8.00010-1
4. Kumar V et al (2014) Barrier height inhomogeneities induced anomaly in thermal sensitivity of Ni/4H-SiC Schottky diode temperature sensor. J Vac Sci Technol B Nanotechnol Microelectron Mater Process Meas Phenom 32(4):041203. https://doi.org/10.1116/1.4884756
5. Kumar V et al (2016) Capacitance roll-off and frequency-dispersion capacitance-conductance phenomena in field plate and guard ring edge-terminated Ni/SiO2/4H-nSiC Schottky barrier diodes. Phys status solidi 213(1):193–202. https://doi.org/10.1002/pssa.201532454
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