Comparative Study of Different Material Tri-Gate MOSFET with Dielectric Material
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Publisher
Springer Nature Singapore
Link
https://link.springer.com/content/pdf/10.1007/978-981-16-8826-3_34
Reference19 articles.
1. Dash DK, Saha P, Sarkar SK (2020) 3-D analytical modeling of triple metal tri-gate graded channel high-k SON TFET for improved performance. Silicon J, Springer Silicon 12:2041–2052
2. Saha P, Sarkhel S, Sarkar SK (2018) Compact 3D modeling and performance analysis of dual material tri-gate tunnel field effect transistor. https://doi.org/10.1080/02564602.2018. 1428503, IETE Technical Review, Taylor & Francis 36(2)
3. Banerjee P, Sarkar SK (2017) 3-D analytical modeling of highk gate stack dual-material tri-gate strained silicon-on-nothing MOSFET with dual-material bottom gate for suppressing short channel effects. J Computat Electron, Springer 16(3):631–639
4. Park SJ, Jeon DY, Montès L, Barraud S, Gyu-TaeKim GY, Ghibaudo G (2014) Impact of channel width on back biasing effect in tri-gate MOSFET. Microelectron Eng 114:91–97
5. Gola D, Singh B, Tiwari PK (2018) Subthreshold modeling of tri-gate junctionless transistors with variable channel edges and substrate bias effects. IEEE Trans Electron Devices 65(5)
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