Author:
Sehra Khushwant,Kumari Vandana,Gupta Mridula,Mishra Meena,Rawal D. S.,Saxena Manoj
Reference17 articles.
1. Mimura, T., Hiyamizu, S., Fujii, T., Nanbu, K.: A new field-effect transistor with selectively doped GaAs/n-AlxGa1−xAs heterojunctions. Jpn J Appl Phys 19(5), L.225–L.227 (1980)
2. Islam, S.S., Anwar, A.F.M.: Design of GaN/AlGaN HEMT class-E power amplifier considering trapping and thermal effects. In: IEEE Lester Eastman Conference on High Performance Devices, pp. 155–163 (2003)
3. Sahoo, D.K., Lal, R.K., Kim, H., Tilak, V., Eastman, L.F.: High-field effects in silicon nitride passivated GaN MODFets. IEEE Trans. Electron Devices 50(5), 1163–1170 (2003)
4. Nakarmi, M.L., Nepal, N., Lini, J.Y., Jianga, H.X.: Unintentionally doped n-type Al0.67Ga0.33N epilayers. Appl. Phys. Lett. 86(26), 261902-1-261902–3 (2005)
5. Subramani, N.K., Couvidat, J., Hajjar, A.A., Nallatamby, J.C., Sommet, R., Quéré, R.: Identification of GaN buffer traps in microwave power AlGaN/GaN HEMTs through low frequency S-parameters measurements and TCAD-based physical device simulations. IEEE J. Electron Dev. Soc. 5(3), 175–181 (2017)