Abstract
Abstract
The innovative two-step passivation by octadecanethiol (ODT) self-assembled monolayers (SAMs) and the following silicon dioxide (SiO2) deposition was used for the type-II InAs/GaSb superlattice photodetector. To understand the mechanism of passivation, the (100) GaSb surface covered with the ODT and, for comparison, with the biphenyl thiol (BPT), was characterized by the atomic force microscopy, Raman spectroscopy and contact angle analysis. The results of the study indicated the presence of the homogeneous both the ODT and the BPT monolayers; however, the ODT SAMs were more stable. Therefore, the ODT-based wet treatment was used in the two-step passivation resulting in a reduction of the dark current by one order of magnitude for passivated detector compared with an unpassivated device.
Publisher
Springer Science and Business Media LLC
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by
4 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献