Surface-electrode ion trap design for near-field microwave quantum gates

Author:

Tarlton James E.,Thompson Richard C.,Lucas David M.

Abstract

AbstractWe present a design study into an ion trap electrode geometry for applying near-field microwave two-qubit gates. This design features an ‘S’-shaped meander electrode to passively null the microwave field. It has ground planes separating the meander electrode from all of the DC and single-qubit microwave electrodes, which should reduce the sensitivity of the microwave field distribution to the boundary conditions of these electrodes. We show that it is possible to design a single-layer trap with this geometry such that the simulated microwave field null overlaps with the RF field null, and that the positions of these nulls can be simulated to a precision of 100 nm with moderate computing resources. We also show that such a trap can be designed such that ion chains can be trapped, transported and split with feasible DC and RF voltages. While this particular design is optimized for$$^{43}$$43Ca$$^{+}$$+ions, our approach could be applied to other ions by changing the microwave frequency to match the corresponding qubit transition frequency.

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

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