Characterization of ion-implanted silicion by Rutherford backscattering spectrometry and ellipsometry-Reference-Cited by-同舟云学术

Characterization of ion-implanted silicion by Rutherford backscattering spectrometry and ellipsometry

Published:1984-07 Issue:1 Volume:83 Page:75-81
ISSN:0236-5731
Container-title:Journal of Radioanalytical and Nuclear Chemistry Articles
language:en
Short-container-title:Journal of Radioanalytical and Nuclear Chemistry, Articles

Author:

Lohner T.,Kótai E.,Pászti F.,Manuaba A.,Fried M.,Gyulai J.

Publisher

Springer Science and Business Media LLC

Subject

Health, Toxicology and Mutagenesis,Public Health, Environmental and Occupational Health,Spectroscopy,Pollution,Radiology Nuclear Medicine and imaging,Nuclear Energy and Engineering,Analytical Chemistry

Link

http://link.springer.com/content/pdf/10.1007/BF02209296.pdf

Reference11 articles.

1. R. M. A. ZZZAM, N. M. BASHARA, Ellipsometry and Polarized Light, North-Holland, Amsterdam, 1977.

2. A. V. RZHANOV, K. K. SVITASHEV, Advances in Electronics and Electron Physics, 49 (1979) 1.

3. W. K. CHU, J. W. MAYER, M-A. NICOLET, Backscattering Spectrometry, Academic Press, New York, 1978.

4. D. V. MORGAN, Channeling (Theory, Observation and Application), John Wiley and Sons, London, 1973.

5. G. MEZEY, E. KÓTAI, T. LOHNER, T. NACY, J. GYULAI, A. MANUABA, Nucl. Instr. Methods, 149 (1978) 235.

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1. Comparative study of ion implantation caused anomalous surface damage in silicon studied by spectroscopic ellipsometry and Rutherford backscattering spectrometry;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1999-01

2. Surface disorder production during plasma immersion implantation and high energy ion implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1996-09

3. Anomalous surface damage production during high energy implantation analyzed by ellipsometry and RBS;Ion Beam Modification of Materials;1996

4. Ion-implantation induced anomalous surface amorphization in silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1994-03

5. Ion-implantation-caused special damage profiles determined by spectroscopic ellipsometry in crystalline and in relaxed (annealed) amorphous silicon;Thin Solid Films;1993-10